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1.High peak power·2.High repetition rate·3.Short pulse duration
| Place of Origin | China (Mainland) | Model Number | MPL-H-532 |
|---|---|---|---|
| Wavelength | 532nm | Outputpower | 30~150mW |
| Single pulse energy | 5~30uJ | Size | Standard |
| Details | 1.High peak power · 2.High repetition rate · 3.Short pulse duration |
| Packaging Detail | vaccum anti-static |
|---|---|
| Delivery Detail | 1- 2 weeks |
APPLICATIONS:
It is widely used in industry (marking on the diamond or stone), teaching of nonlinea optics, experiments of generating 355nm, or 266nm laser, fiber communication, etc.
SPECIFICATIONS:
Wavelength (nm) | 532±1 | |
Operating mode | Q-switched pulsed laser | |
Single pulse energy (µJ) | 5~30 | |
Pulse duration (ns) | ~10 | |
Peak power (W) | 300~1000 | |
Rep. rate (kHz) | Controllable | Specified One rep. rate, such as 1k, 2k, 3k, up to 5kHz, with stable laser pulses emitting (stable pulse energy, peak, duration and period). |
| Different rep. rate in the range of 1Hz-5kHz can be obtained by input an external TTL signal. | ||
| Uncontrollable | Undefined rep. rate among 5k-30kHz and unstable laser pulse emitting. Suitable for the applications only needing high peak power pulses. | |
Average power (mW) | Average power (mW) = Single pulse energy (µJ) * Rep. rate (kHz) | |
Ave power stability (over 4 hours) | <1%, <3%, <5% | |
Transverse mode | Near TEM00 | |
Warm-up time (minutes) | <10 | |
M2factor | <1. 5 | |
Beam divergence, full angle (mrad) | <2. 0 | |
Beam diameter at the aperture (mm) | ~3. 0 | |
Beam height from base plate (mm) | 29 | |
Operating temperature (°C) | 10~35 | |
Power supply (90-264VAC) | PSU-H-FDA | |
Expected lifetime (hours) | 10000 | |
Warranty period | 1 year | |
Remarks | UV laser at 266nm or 355nm can be generated by MPL-H-1064 or MPL-H-532 by frequency doubler. | |
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